Title :
A full X-band high-efficiency 12-watt GaAs MMIC power amplifier with harmonic tuning
Author :
Qinyang Wu ; Bai Song ; Yi-Chi Shih ; Xiaoqi Huang ; Jingwei Wu
Author_Institution :
RML Technol. Co., Ltd., Chengdu, China
Abstract :
In this paper, the design and measurements of a 8-12GHz high-efficiency MMIC high power amplifier (HPA) implemented in a 0.25μm GaAS pHEMT process is described. The 3-stage amplifier has demonstrated from 37% to 54% power-added efficiency (PAE) with 12W of output power and up to 27dB of small signal gain range from 8-12GHz. In particular, over the frequency band of 9-11 GHz, the circuit achieved above 45% PAE. The key to this design is determining and matching the optimum source and load impedance for PAE at the first two harmonics in output stage.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; circuit tuning; field effect MMIC; gallium arsenide; 3-stage amplifier; GaAs; GaAs pHEMT process; efficiency 37 percent to 54 percent; frequency 8 GHz to 12 GHz; full X-band high-efficiency MMIC power amplifier; harmonic tuning; power 12 W; power-added efficiency; size 0.25 mum; Bandwidth; Gain; Impedance; MMICs; PHEMTs; Power amplifiers; Power generation; Monolithic microwave integrated circuit (MMIC); X-band; gallium arsenide; high efficiency; high power amplifier;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2015 IEEE Topical Conference on
Conference_Location :
San Diego, CA
DOI :
10.1109/PAWR.2015.7139200
