The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain

Author

Qamar, Afzaal ; Hoang-Phuong Phan ; Dzung Viet Dao ; Tanner, Philip ; Toan Dinh ; Li Wang ; Dimitrijev, Sima

Author_Institution

Queensland Micro-Nanotechnol. Centre, Griffith Univ., Nathan, QLD, Australia

Volume

36

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

708

Lastpage

710

Abstract

This letter reports for the first time the strain dependence of the offset voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the offset voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the offset voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.

Keywords

chemical vapour deposition; epitaxial growth; photolithography; semiconductor devices; sensitivity analysis; silicon; silicon compounds; thin films; wide band gap semiconductors; SiC; bending beam method; chemical vapor deposition; compressive strain application; device sensitivity; dry etch process; epitaxial growth; four-terminal van der Pauw device; mechanical sensing application; offset voltage; p-type 3C-SiC van der Pauw device; p-type Si(100) wafer; photolithography; tensile strain application; thin film; Piezoresistance; Resistors; Sensors; Silicon; Silicon carbide; Strain; Substrates; P-type 3C-SiC; strain sensor; van der Pauw device;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2435153

Filename

7110537