Transceiver chip design in high voltage 0.25µm CMOS technology for magnetic resonance system

Author

Heng-Ming Hsu ; Chun-Tsai Chien ; Dien-Ying Wu

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan

fYear

2015

fDate

13-15 May 2015

Firstpage

1

Lastpage

3

Abstract

A transceiver IC chip of wireless power transfer is design for wearable device application. The chip forced a V_DD of 24V is operated at 11MHz clock rate. The non-overlap clock technique is adopted in chip design for improving the efficiency. To verify the proposed circuit, the chip is implemented by TSMC High Voltage 0.25μm CMOS technology. The testing board is design to measure the IC chip. The driver chip dissipates 23.48W from DC source and deliver a power of 22.73W to 22Ω load. Therefore, the IC chip efficiency is 92.3%. The magnetic resonance coil is design to test the IC chip. The measurement S₂₁ peak is occurred at 5.5MHz in resonance coil.

Keywords

CMOS integrated circuits; inductive power transmission; integrated circuit design; magnetic resonance; transceivers; TSMC high voltage CMOS technology; clock technique; frequency 11 MHz; magnetic resonance system; power 22.73 W; power 23.48 W; size 0.25 mum; transceiver IC chip; transceiver chip design; voltage 24 V; wearable device application; wireless power transfer; Couplings; Integrated circuits; Magnetic resonance; Semiconductor device measurement; Testing; Transceivers; Wireless communication; IC chip; Magnetic resonance coupling; transceiver; wearable device; wireless power transfer;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Power Transfer Conference (WPTC), 2015 IEEE

Conference_Location

Boulder, CO

Type

conf

DOI

10.1109/WPT.2015.7140164

Filename

7140164