Comparison of current driven Class-D and Class-E half-wave rectifiers for 6.78 MHz high power IPT applications

Author

Kkelis, George ; Yates, David C. ; Mitcheson, Paul D.

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK

fYear

2015

fDate

13-15 May 2015

Firstpage

1

Lastpage

4

Abstract

Two current driven half wave rectifier topologies, Class-D and -E, have been characterised for IPT applications. Both rectifiers utilised SiC Schottky diodes for high power capability. The Class-D topology has reached efficiencies up to 95% and the Class-E up to 90%. Both topologies achieved their highest efficiencies at high voltage operation as the parasitic capacitances of the SiC diodes were affecting the circuit´s operation at low voltages.

Keywords

Schottky diodes; inductive power transmission; rectifiers; silicon compounds; topology; wide band gap semiconductors; SiC; SiC Schottky diode parasitic capacitance; current driven Class-D half-wave rectifier topology; current driven Class-E half-wave rectifier topology; frequency 6.78 MHz; high power IPT applications; inductive power transfer; Capacitors; Coils; Impedance; Resistance; Semiconductor diodes; Silicon carbide; Topology; Class-D Inverter; Class-D Rectifier; Class-E Rectifier; Wireless Power Transfer;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Power Transfer Conference (WPTC), 2015 IEEE

Conference_Location

Boulder, CO

Type

conf

DOI

10.1109/WPT.2015.7140166

Filename

7140166