Investigation of high- and low-κ Gate dielectrics in tuning of graphene-loaded THz antennas

Author

Hekmati, Reza ; Fard, Hassan Ghafori ; Neshat, Mohammad ; Fathipour, Morteza

Author_Institution

Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2015

fDate

10-14 May 2015

Firstpage

1098

Lastpage

1102

Abstract

The effect of low- and high- κ gate dielectrics and their thickness on tuning of graphene-loaded THz antennas are studied. According to our study, SiO₂ provides higher tuning range for a resonance frequency as compared to Al₂O₃. For the particular antenna considered in this study, as thickness of SiO₂ is decreased tuning range changed between 190 to 320 GHz. This amount for Al₂O₃ is 190 to 220 GHz. Based on our results, decreasing the thickness of SiO₂ can increase the bandwidth more than 68 percent. Thickness variation of Al₂O₃ could enhance bandwidth around 17 percent. In both gate dielectrics, higher parallel resonance frequency is achieved by lower dielectric thickness.

Keywords

aluminium compounds; antennas; graphene; high-k dielectric thin films; silicon compounds; Al₂O₃; SiO₂; frequency 190 GHz to 320 GHz; graphene-loaded THz antennas; high-κ gate dielectrics; low-κ gate dielectrics; resonance frequency; tuning range; Conferences; Decision support systems; Electrical engineering; Antenna; Bandwidth; Gate dielectric; Graphene; Terahertz; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2015 23rd Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4799-1971-0

Type

conf

DOI

10.1109/IranianCEE.2015.7146376

Filename

7146376