Title :
Low power potentiostat using switching technique for three electrode amperometric sensors
Author :
Ghanabri, Sonia ; Habibi, Mehdi
Author_Institution :
Dept. of Electr. Eng., Univ. of Isfahan, Isfahan, Iran
Abstract :
A low power potentiostat is presented in this work with the aim of power consumption reduction. The proposed potentiostat has been designed to cover sensor currents in the range of milliamps. Simulation results have been obtained for a typical electrochemical cell using a 180 nm CMOS technology. Low power, low settling time and low ripple of output voltage are the main features of the proposed structure. The suggested architecture is an appropriate choice for ultra low power applications such as implantable biosensors.
Keywords :
CMOS analogue integrated circuits; amperometric sensors; biosensors; CMOS technology; electrode amperometric sensors; implantable biosensors; low-power potentiostat; power consumption reduction; size 180 nm; switching technique; ultralow power applications; CMOS integrated circuits; Computer architecture; Inductors; Microprocessors; Power demand; Power dissipation; Sensors; electrochemical cell; low power; potentiostat; switching technique;
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
DOI :
10.1109/IranianCEE.2015.7146387
