DocumentCode :
718088
Title :
Low power potentiostat using switching technique for three electrode amperometric sensors
Author :
Ghanabri, Sonia ; Habibi, Mehdi
Author_Institution :
Dept. of Electr. Eng., Univ. of Isfahan, Isfahan, Iran
fYear :
2015
fDate :
10-14 May 2015
Firstpage :
1154
Lastpage :
1158
Abstract :
A low power potentiostat is presented in this work with the aim of power consumption reduction. The proposed potentiostat has been designed to cover sensor currents in the range of milliamps. Simulation results have been obtained for a typical electrochemical cell using a 180 nm CMOS technology. Low power, low settling time and low ripple of output voltage are the main features of the proposed structure. The suggested architecture is an appropriate choice for ultra low power applications such as implantable biosensors.
Keywords :
CMOS analogue integrated circuits; amperometric sensors; biosensors; CMOS technology; electrode amperometric sensors; implantable biosensors; low-power potentiostat; power consumption reduction; size 180 nm; switching technique; ultralow power applications; CMOS integrated circuits; Computer architecture; Inductors; Microprocessors; Power demand; Power dissipation; Sensors; electrochemical cell; low power; potentiostat; switching technique;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
Type :
conf
DOI :
10.1109/IranianCEE.2015.7146387
Filename :
7146387
Link To Document :
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