• DocumentCode
    718109
  • Title

    Time domain modeling of crosstalk voltage on MWCNT interconnects

  • Author

    Sheikhassadi, Hossein ; Masoumi, Nasser ; Gholipour, Morteza ; Rahiminejad, Majid

  • Author_Institution
    Adv. VLSI Lab., Univ. of Tehran, Tehran, Iran
  • fYear
    2015
  • fDate
    10-14 May 2015
  • Firstpage
    1301
  • Lastpage
    1305
  • Abstract
    This paper concentrates on the time domain modeling of MWCNT interconnect crosstalk voltage for both aggressor and quiet victim lines. The methodology exploits a Compact RC model for MWCNT interconnects to model the time domain crosstalk. This time domain modeling of MWCNT interconnects for both the victim and aggressor lines is presented for the first time. We used this mode to analyze the crosstalk effect in two coupled MWCNTs interconnects. Simulations are done for the global level interconnects in 14nm and 22nm technology nodes. The results show a good conformance with the simulation results of colossal distributed model, as the reference, with an average error being less than 1.3% for maximum induced voltage of quiet victim line for all technology nodes and lengths. The proposed model can efficiently be used to predict the crosstalk effect in the future MWCNT-based circuits.
  • Keywords
    RC circuits; crosstalk; integrated circuit interconnections; multi-wall carbon nanotubes; MWCNT interconnect crosstalk voltage; RC model; colossal distributed model; multiwall carbon nanotube; size 14 nm; size 22 nm; time domain crosstalk; Conferences; Decision support systems; Electrical engineering; crosstalk analysis; interconnect; multiwalled carbon nanotube; time domain modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4799-1971-0
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2015.7146417
  • Filename
    7146417