DocumentCode :
718109
Title :
Time domain modeling of crosstalk voltage on MWCNT interconnects
Author :
Sheikhassadi, Hossein ; Masoumi, Nasser ; Gholipour, Morteza ; Rahiminejad, Majid
Author_Institution :
Adv. VLSI Lab., Univ. of Tehran, Tehran, Iran
fYear :
2015
fDate :
10-14 May 2015
Firstpage :
1301
Lastpage :
1305
Abstract :
This paper concentrates on the time domain modeling of MWCNT interconnect crosstalk voltage for both aggressor and quiet victim lines. The methodology exploits a Compact RC model for MWCNT interconnects to model the time domain crosstalk. This time domain modeling of MWCNT interconnects for both the victim and aggressor lines is presented for the first time. We used this mode to analyze the crosstalk effect in two coupled MWCNTs interconnects. Simulations are done for the global level interconnects in 14nm and 22nm technology nodes. The results show a good conformance with the simulation results of colossal distributed model, as the reference, with an average error being less than 1.3% for maximum induced voltage of quiet victim line for all technology nodes and lengths. The proposed model can efficiently be used to predict the crosstalk effect in the future MWCNT-based circuits.
Keywords :
RC circuits; crosstalk; integrated circuit interconnections; multi-wall carbon nanotubes; MWCNT interconnect crosstalk voltage; RC model; colossal distributed model; multiwall carbon nanotube; size 14 nm; size 22 nm; time domain crosstalk; Conferences; Decision support systems; Electrical engineering; crosstalk analysis; interconnect; multiwalled carbon nanotube; time domain modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
Type :
conf
DOI :
10.1109/IranianCEE.2015.7146417
Filename :
7146417
Link To Document :
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