• DocumentCode
    718116
  • Title

    Investigation of the p-type behavior in Cu2O: An ab initio study

  • Author

    Etghani, S. Ahmad ; Nadimi, Ebrahim

  • Author_Institution
    Electr. Eng. Dept., Univ. of Tehran, Tehran, Iran
  • fYear
    2015
  • fDate
    10-14 May 2015
  • Firstpage
    1336
  • Lastpage
    1340
  • Abstract
    Cu2O, as a p-type semiconductor, is a good alternative material for Si-based Solar cells. Investigation on Cu2O conduction mechanism is important to achieve solar cells with better efficiency. In this paper we investigated the electronic structure of crystalline Cu2O by ab initio calculations based on density functional theory. We computed the formation energy of p-type defects in a 3×3×3 supercell. The calculated defect levels along with the charge distribution analysis indicate a localization of defect induced holes in Cu2O.
  • Keywords
    ab initio calculations; copper compounds; density functional theory; semiconductors; silicon; solar cells; Cu2O; Si; Si-based solar cells; ab initio calculations; conduction mechanism; crystalline electronic structure; density functional theory; p-type semiconductor; Conferences; Electrical engineering; Cu Vacancy; Cuprous Oxide; Density functional theory; Photovoltaic;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4799-1971-0
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2015.7146424
  • Filename
    7146424