DocumentCode
718116
Title
Investigation of the p-type behavior in Cu2 O: An ab initio study
Author
Etghani, S. Ahmad ; Nadimi, Ebrahim
Author_Institution
Electr. Eng. Dept., Univ. of Tehran, Tehran, Iran
fYear
2015
fDate
10-14 May 2015
Firstpage
1336
Lastpage
1340
Abstract
Cu2O, as a p-type semiconductor, is a good alternative material for Si-based Solar cells. Investigation on Cu2O conduction mechanism is important to achieve solar cells with better efficiency. In this paper we investigated the electronic structure of crystalline Cu2O by ab initio calculations based on density functional theory. We computed the formation energy of p-type defects in a 3×3×3 supercell. The calculated defect levels along with the charge distribution analysis indicate a localization of defect induced holes in Cu2O.
Keywords
ab initio calculations; copper compounds; density functional theory; semiconductors; silicon; solar cells; Cu2O; Si; Si-based solar cells; ab initio calculations; conduction mechanism; crystalline electronic structure; density functional theory; p-type semiconductor; Conferences; Electrical engineering; Cu Vacancy; Cuprous Oxide; Density functional theory; Photovoltaic;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location
Tehran
Print_ISBN
978-1-4799-1971-0
Type
conf
DOI
10.1109/IranianCEE.2015.7146424
Filename
7146424
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