DocumentCode
718125
Title
Stability investigation in RSFQ NDRO cell
Author
Jabbari, Tahereh ; Zandi, Hesam ; Foroughi, Farshad ; Fardmanesh, Mehdi
Author_Institution
Superconductive Electron. Res. Lab., Sharif Univ. of Technol., Tehran, Iran
fYear
2015
fDate
10-14 May 2015
Firstpage
1398
Lastpage
1402
Abstract
There are several limitations on RSFQ circuit parameters determining their margins in critical conditions. We thoroughly investigated the sequential operation of the basic RSFQ circuits and study the corresponding behavior by comparing the measurable variables such as current response while modifying the eligible circuit´s parameters. We introduce some figures of merit such as current level stability, current fluctuation damping after each pulse and circuit sensitivity, leading to obtain optimized parameters. A NDRO, cell based on T Flip-Flop (TFF), is particularly selected to verify the procedure. The optimized parameters are achieved by software simulation, considering the figures of merit. We also calculated the critical margins for main parameters in which the circuit is still remain stable.
Keywords
circuit stability; flip-flops; superconducting logic circuits; RSFQ NDRO cell stability; RSFQ circuit parameters; T flip-flop; critical conditions; current fluctuation damping; current level stability; figures of merit; rapid single flux quantum logic; sequential operation; Conferences; Decision support systems; Electrical engineering; Josephson Junction; Optimization; Rapid Single Flux Quantum (RSFQ); Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location
Tehran
Print_ISBN
978-1-4799-1971-0
Type
conf
DOI
10.1109/IranianCEE.2015.7146438
Filename
7146438
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