Surface modification of mesoporous silicon for nanoelectronics applications

Author

Kutovyi, Y. ; Dybovskyi, R. ; Gavrilchenko, I. ; Skryshevsky, V. ; Milovanov, Y. ; Skryshevski, Yu. ; Vahnin, O.

Author_Institution

Inst. of High Technol., Taras Shevchenko Nat. Univ. of Kyiv, Kiev, Ukraine

fYear

2015

fDate

21-24 April 2015

Firstpage

65

Lastpage

69

Abstract

The method of successive ionic layer deposition of lanthanum fluoride layers was applied to modify the mesoporous silicon structures. It was shown that this method allows transforming of the non-luminescent mesoporous silicon into high stability luminescent material. The obtained structures demonstrate the crucial role of the chemical composition of silicon nanocrystallite surface in the formation of radiated recombination channels and in the stability of porous silicon photoluminescence. The photoluminescence and thermally stimulated luminescence of elaborated structures were compared with nanoporous materials obtained by routine method of electrochemical etching.

Keywords

crystallites; elemental semiconductors; mesoporous materials; photoluminescence; porous semiconductors; silicon; surface composition; surface treatment; thermoluminescence; Si; chemical composition; electrochemical etching; high-stability luminescent material; lanthanum fluoride; nanoelectronics; nanoporous materials; nonluminescent mesoporous silicon; photoluminescence; radiated recombination channels; silicon nanocrystallite surface; successive ionic layer deposition; surface modification; thermally stimulated luminescence; Adsorption; Mesoporous materials; Photoluminescence; Silicon; Surface treatment; lanthanum fluoride layer; luminescence; porous silicon; surface passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on

Conference_Location

Kiev

Type

conf

DOI

10.1109/ELNANO.2015.7146836

Filename

7146836