Title :
DC and noise characteristics of underlap Ultra-Thin BOX SOI nMOSFETs
Author :
Kudina, V. ; Garbar, N. ; Simoen, E. ; Claeys, C.
Author_Institution :
V.E. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The evolution of the 1/f noise and the resistance of extensionless Ultra-Thin BOX SOI nMOSFETs with decreasing gate length in comparison with standard ones is analyzed. It is revealed that the non-overlapped under-spacer regions define the resistance and 1/f noise behavior of extensionless devices.
Keywords :
1/f noise; MOSFET; silicon-on-insulator; 1/f noise; silicon-on-insulator; ultra-thin BOX SOI nMOSFET; 1f noise; Logic gates; MOSFET; Resistance; Silicon; Standards; 1/f noise; Ultra-thin BOX MOSFET; extension architecture;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146849
