Title :
Electrophysical properties of Al/nanocrystalline CeOx/Si/Al structures
Author :
Maksimchuk, N.V. ; Korolevych, L.N. ; Borisov, A.V.
Author_Institution :
Nat. Tech. Univ. of Ukraine “Kiev Polytech. Inst.”, Kiev, Ukraine
Abstract :
Nanocrystalline CeOx film in the Al/nc-CeOx/Si-Al structures has been obtained using flash evaporation method and method of metallic Ce oxidation. The electrophysical properties of the Al/nc-CeOx/Si/Al structures and the effect of technological factors on these properties have been investigated. It was revealed that the nanocrystalline CeOx layer in the Al/nc-CeOx/Si/Al structures is a semiconductor with an electronic conductivity and volume resistivity is within the range of 0.5-30 MΩ·cm. Based on the synthesized Al/nc-CeOx/Si/Al structures the new types of heterojunction diodes with high interface quality have been developed. Interface state density of obtained structures is of about 7·1010 cm-2·eV-1.
Keywords :
aluminium; cerium compounds; electrical conductivity; electrical resistivity; elemental semiconductors; interface states; metal-semiconductor-metal structures; nanofabrication; nanostructured materials; oxidation; semiconductor diodes; semiconductor growth; semiconductor thin films; silicon; vacuum deposition; Al-CeOx-Si-Al; electronic conductivity; electrophysical properties; flash evaporation; heterojunction diodes; interface state density; metallic oxidation; nanocrystalline film; semiconductor; volume resistivity; Cerium; Conductivity; Films; Heterojunctions; Oxidation; Silicon; Substrates; Al/CeOx/Si/Al structure; electrophysical properties; heterojunction; nanocrystalline CeOx;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146857
