The Q-band low noise reference oscillator based on bipolar transistor designed for the pulse ESR spectrometer

Author

Sitnikov, A.A. ; Kalabukhova, E.N. ; Oliynik, V.V. ; Kolisnichenko, M.V.

Author_Institution

Dept. of Semicond. heterostructures, V.E. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2015

fDate

21-24 April 2015

Firstpage

317

Lastpage

320

Abstract

The construction of the low noise Q-band reference oscillator based on the voltage controlled bipolar GaAs transistor for the transmitter of pulse microwave (MW) bridge designed for the pulse electron spin resonance (ESR) spectrometer has been presented. The application of the reference MW oscillator, which consists of a quartz crystal oscillator, frequency synthesizer and a low-noise GaAs bipolar transistor, instead of klystron or Gunn oscillator, results in the improvement of the phase and frequency noise of the pulse ESR spectrometer, which makes it well suited for the dating and diagnostics of the biomaterials by pulse ESR methods.

Keywords

Gunn oscillators; III-V semiconductors; bipolar transistors; frequency synthesizers; gallium arsenide; klystrons; microwave oscillators; spectrometers; GaAs; Gunn oscillator; Q-band low noise reference oscillator; biomaterials; bipolar transistor; frequency synthesizer; klystron; pulse electron spin resonance spectrometer; quartz crystal oscillator; Bridge circuits; Frequency control; Frequency conversion; Frequency synthesizers; Noise; Voltage-controlled oscillators; electron spin echo spectrometer; frequency noise; oscillator on bipolar transistor; pulse mw bridge;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on

Conference_Location

Kiev

Type

conf

DOI

10.1109/ELNANO.2015.7146900

Filename

7146900