Title :
Automatic test complex for parametric control of power NMOS and PMOS transistors
Author :
Aristova, N.E. ; Borisov, A.Y. ; Tararaksin, A.S. ; Kessarinskiy, L.N. ; Yanenko, A.V.
Author_Institution :
Nat. Res. Nucl. Univ. MEPhI (Moscow Eng. Phys. Inst.), Moscow, Russia
Abstract :
This article describes the automated test complex for parametric control of power n- and p-MOSFET transistors before, during and after irradiation tests based on the National instruments PXI standard equipment.
Keywords :
MOSFET; automatic testing; power transistors; semiconductor device testing; automatic test complex; parametric control; power NMOS transistors; power PMOS transistors; Current measurement; MOSFET; Microelectronics; Nickel; Radiation effects; Threshold voltage; MOS transistor; PXI; parametric control; radiation; tests;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7146984
