DocumentCode
718541
Title
MOSFETs selection software to form parallel and series connections
Author
Bespalov, N.N. ; Lysenkov, A.E. ; Ilyin, M.V. ; Kapitonov, S.S.
Author_Institution
Dept. of Electron. & Nanoelectron., Ogarev Mordovia State Univ., Saransk, Russia
fYear
2015
fDate
21-23 May 2015
Firstpage
1
Lastpage
3
Abstract
The article considers the program module for power MOSFETs selection by electrical and thermal parameters for device group connection. Submitted program interface. Proposed a new approach to the creation of MOSFET electrothermal model. Describes process of modeling.
Keywords
power MOSFET; MOSFET electrothermal model; MOSFET selection software; device group connection; parallel connections; power MOSFET; program module; series connections; Crystals; MOSFET; Semiconductor device modeling; Temperature; Thermal resistance; MOSFET; current-voltage characteristic; modeling; parallel and series connection; selection; thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location
Omsk
Print_ISBN
978-1-4799-7102-2
Type
conf
DOI
10.1109/SIBCON.2015.7147000
Filename
7147000
Link To Document