Title :
MOSFETs selection software to form parallel and series connections
Author :
Bespalov, N.N. ; Lysenkov, A.E. ; Ilyin, M.V. ; Kapitonov, S.S.
Author_Institution :
Dept. of Electron. & Nanoelectron., Ogarev Mordovia State Univ., Saransk, Russia
Abstract :
The article considers the program module for power MOSFETs selection by electrical and thermal parameters for device group connection. Submitted program interface. Proposed a new approach to the creation of MOSFET electrothermal model. Describes process of modeling.
Keywords :
power MOSFET; MOSFET electrothermal model; MOSFET selection software; device group connection; parallel connections; power MOSFET; program module; series connections; Crystals; MOSFET; Semiconductor device modeling; Temperature; Thermal resistance; MOSFET; current-voltage characteristic; modeling; parallel and series connection; selection; thermal resistance;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7147000
