Title :
Design of the pHEMT GaAs MIC L-band on-off switch and low-noise amplifier for autonomous spacecraft radionavigation equipment
Author :
Shkolniy, V.N. ; Kondratenko, A.V. ; Shishkin, D.A. ; Suntsov, S.B. ; Alekseev, K.A. ; Karaban, V.M.
Author_Institution :
Dept. for Designing & Testing Radioelectron. Equip., JSC "ISS", Zheleznogorsk, Russia
Abstract :
The technical solutions design of monolithic integrated circuits (MIC) on-off switch and low-noise amplifier (LNA) of L-band is presented. The design was conducted on the basis of 0,15 microns pHEMT arsenide-gallium technology of own production for application as a part of on-board receivers of the global navigation satellite systems (GNSS) signals of all types orbits spacecraft´s for their autonomous coordinate and time providing.
Keywords :
III-V semiconductors; autonomous aerial vehicles; gallium arsenide; high electron mobility transistors; integrated circuit design; low noise amplifiers; monolithic integrated circuits; receivers; satellite navigation; GNSS; GaAs; autonomous spacecraft radionavigation equipment; global navigation satellite systems; low-noise amplifier; monolithic integrated circuits; on-board receivers; pHEMT MIC L-band on-off switch; Gallium arsenide; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Microwave measurement; Switches; Switching circuits; FETs; GNSS-signals; Schottky´s gate; arsenide-gallium technology; low-noise amplifier; monolithic integrated circuits; navigation receiver; on-off switch; semiconductors; spacecraft;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7147089
