DocumentCode :
718719
Title :
The optical properties of 9 MeV electron irradiated GaSe crystals
Author :
Redkin, R.A. ; Prudaev, I.A. ; Sarkisov, S.Yu. ; Kosobutsky, A.V. ; Brudnyi, V.N.
Author_Institution :
Functional Electron. Lab., Tomsk State Univ., Tomsk, Russia
fYear :
2015
fDate :
21-23 May 2015
Firstpage :
1
Lastpage :
3
Abstract :
Two absorption bands in transparency region in high-energy electron irradiated GaSe crystals have been experimentally found. The optical transmission spectra of the crystals are studied in order to elucidate the origin and energy positions of related defect states. The measurements of optical transmission spectra temperature dependencies, radiation defect annealing and analysis of the optical spectra within existing theoretical models were performed.
Keywords :
III-VI semiconductors; annealing; defect states; electron beam effects; gallium compounds; infrared spectra; optical materials; thermo-optical effects; transparency; visible spectra; absorption bands; defect states; electron irradiated GaSe crystals; electron volt energy 9 MeV; optical properties; optical transmission spectra; radiation defect annealing; temperature dependencies; transparency region; Absorption; Crystals; Electron optics; Gases; Nonlinear optics; Optical variables measurement; Radiation effects; deep levels; electron irradiation; gallium selenide; radiation defects; transmission spectra;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
Type :
conf
DOI :
10.1109/SIBCON.2015.7147212
Filename :
7147212
Link To Document :
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