Title :
The UHF oscillators based on a HEMT structure with negative conductivity
Author :
Semenov, Andriy ; Semenova, Olena ; Osadchuk, Oleksandr
Author_Institution :
Fac. of Radio Eng., Telecommun. & Instrum. Eng., Vinnytsia Nat. Tech. Univ., Vinnytsia, Ukraine
Abstract :
The article considers a possibility of constructing microwave oscillators on a transistor structure with negative conductivity based on two HEMT. Obtained non-linear equations can be used to model microwave oscillator parameters and characteristics with an error not more than 10%.
Keywords :
UHF oscillators; high electron mobility transistors; microwave oscillators; nonlinear equations; HEMT structure; UHF oscillators; microwave oscillators; negative conductivity; nonlinear equations; Conductivity; HEMTs; Integrated optics; Mathematical model; Optical saturation; Oscillators; HEMT; negative conductivity; ocsilator; transistor structure;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7147215
