DocumentCode
718726
Title
Effect in GaAs produced by fast neutrons and protons
Author
Soboleva, E.G. ; Litvinenko, V.V. ; Krit, T.B.
Author_Institution
Inst. of Technol., Tomsk Polytech. Univ., Yurga, Russia
fYear
2015
fDate
21-23 May 2015
Firstpage
1
Lastpage
4
Abstract
It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.
Keywords
III-V semiconductors; annealing; defect states; gallium arsenide; neutron effects; proton effects; GaAs; annealing; defect formation; electron volt energy 65 MeV; fast neutron irradiation; heat treatment; high-energy proton irradiation; p-type defects; Annealing; Electron traps; Filling; Gallium arsenide; Neutrons; Protons; Shape; DLTS spectr; GaAs; Schottky barrier; neutron; proton;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location
Omsk
Print_ISBN
978-1-4799-7102-2
Type
conf
DOI
10.1109/SIBCON.2015.7147220
Filename
7147220
Link To Document