Title :
The charge character in the double-barrier quantum dots in well hybrid structure
Author :
Jin, X.B. ; Guo, F.M. ; Yue, F.Y.
Author_Institution :
Shanghai Key Lab. of Multidimensional Inf., Process., East China Normal Univ., Shanghai, China
Abstract :
We present the carrier transport properties in the double-barrier InAs quantum dots and InGaAs quantum well hybrid structure of the photoelectric device and analyze the capacitance hysteresis phenomenon. Due to the coupling effect among multiple quantum dots, the I-V and C-V curves measured of the photoelectric device shows the capacitance changes with the light intensity. We analyze the relationships between charge and discharge states of the hysteresis curves further. When a dumping readout designed and applied, it shows a response enhanced and the sensitivity detected to push more weak light level. It indicates the photoelectric device would be a promising candidate both in quantum information applications and highly sensitive imaging applications operating.
Keywords :
III-V semiconductors; capacitance; discharges (electric); gallium arsenide; indium compounds; photoelectric devices; semiconductor quantum dots; semiconductor quantum wells; C-V curves; I-V curves; InAs; InGaAs; capacitance hysteresis phenomenon; carrier transport properties; charge character; coupling effect; double-barrier quantum dots; light intensity; multiple quantum dots; photoelectric device; quantum well hybrid structure; weak light level; Couplings; Gallium arsenide; Indium gallium arsenide; Photodetectors; Physics; Radiative recombination; charge storage and discharge; dumping; electron transfer; hysteresis; quantum dots and quantum well hybrid structure;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location :
Xi´an
DOI :
10.1109/NEMS.2015.7147352
