Parylene C autofluorescence for on-chip highest processing temperature sensing

This paper reported an on-chip sensing method to record the highest processing temperature that the structure experienced by using the autofluorescence of Parylene C. Temperature properties of Parylene C autofluorescence was studied, that with the increment of processing temperature, the fluorescence intensity kept increasing. Therefore, the Parylene C was deposited on the chip as a temperature indicating label to sensing the highest temperature in a plasma etching process. Test results showed that the heating effect of 5min to 25min plasma etching was successfully presented by the Parylene C autofluorescence. As the deposition process of Parylene C was conformal and fabrication compatible, this method was promising to achieve temperature sensing on micron and submicron scaled structure.