Metal film bridge with TSV-based 3D wafer level packaging

This paper presents the design and reliability research of a metal film bridge used TSV-based three-dimensional wafer level packaging (3DWLP). To compare with metal film bridge based on traditional wire bonding, the vertical TSV interconnects perform a variety of advantages such as shorter transmission length, lower power consumption, higher integrated structure and anti-overload ability. The structure is fabricated using special micro-nano fabrication technology, and its characterization is analyzed by numerical calculation and simulation. The calculation is based on the energy conservation law and the simulation use a software called COMSOL Multiphysics. The results of two methods show TSV-based metal film bridge is reliable under the impact of instantaneous large current.