DocumentCode
718921
Title
Silicon-silicon anodic bonding process with embedded glass
Author
Cui, W.P. ; Liu, G.D. ; Zhang, F.S. ; Hu, H. ; Gao, C.C. ; Hao, Y.L.
Author_Institution
Shenzhen Grad. Sch., Peking Univ., Beijing, China
fYear
2015
fDate
7-11 April 2015
Firstpage
470
Lastpage
475
Abstract
This paper reports a silicon-silicon anodic bonding process based on embedded glass. We successfully embedded glass into patterned silicon groove by fusion treatment and bonded it with another silicon wafer by anodic bonding process. This process realizes the precise control of bonding pattern and the depth of the bonding gap without electrical connection between two silicon wafers. Tension test result shows that the bonding strength is over 7MPa-which is in accordance with normal anodic bonding process, so that the process can be used in a wide range of MEMS devices design.
Keywords
elemental semiconductors; micromechanical devices; silicon; wafer bonding; MEMS devices design; Si; bonding gap; bonding pattern precise control; electrical connection; embedded glass; fusion treatment; silicon groove; silicon wafer; silicon-silicon anodic bonding process; Bonding; Glass; Silicon; Stress; Substrates; Surface treatment; anodic bonding; embedded; glass; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location
Xi´an
Type
conf
DOI
10.1109/NEMS.2015.7147470
Filename
7147470
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