• DocumentCode
    718921
  • Title

    Silicon-silicon anodic bonding process with embedded glass

  • Author

    Cui, W.P. ; Liu, G.D. ; Zhang, F.S. ; Hu, H. ; Gao, C.C. ; Hao, Y.L.

  • Author_Institution
    Shenzhen Grad. Sch., Peking Univ., Beijing, China
  • fYear
    2015
  • fDate
    7-11 April 2015
  • Firstpage
    470
  • Lastpage
    475
  • Abstract
    This paper reports a silicon-silicon anodic bonding process based on embedded glass. We successfully embedded glass into patterned silicon groove by fusion treatment and bonded it with another silicon wafer by anodic bonding process. This process realizes the precise control of bonding pattern and the depth of the bonding gap without electrical connection between two silicon wafers. Tension test result shows that the bonding strength is over 7MPa-which is in accordance with normal anodic bonding process, so that the process can be used in a wide range of MEMS devices design.
  • Keywords
    elemental semiconductors; micromechanical devices; silicon; wafer bonding; MEMS devices design; Si; bonding gap; bonding pattern precise control; electrical connection; embedded glass; fusion treatment; silicon groove; silicon wafer; silicon-silicon anodic bonding process; Bonding; Glass; Silicon; Stress; Substrates; Surface treatment; anodic bonding; embedded; glass; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
  • Conference_Location
    Xi´an
  • Type

    conf

  • DOI
    10.1109/NEMS.2015.7147470
  • Filename
    7147470