Title :
Silicon-silicon anodic bonding process with embedded glass
Author :
Cui, W.P. ; Liu, G.D. ; Zhang, F.S. ; Hu, H. ; Gao, C.C. ; Hao, Y.L.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Beijing, China
Abstract :
This paper reports a silicon-silicon anodic bonding process based on embedded glass. We successfully embedded glass into patterned silicon groove by fusion treatment and bonded it with another silicon wafer by anodic bonding process. This process realizes the precise control of bonding pattern and the depth of the bonding gap without electrical connection between two silicon wafers. Tension test result shows that the bonding strength is over 7MPa-which is in accordance with normal anodic bonding process, so that the process can be used in a wide range of MEMS devices design.
Keywords :
elemental semiconductors; micromechanical devices; silicon; wafer bonding; MEMS devices design; Si; bonding gap; bonding pattern precise control; electrical connection; embedded glass; fusion treatment; silicon groove; silicon wafer; silicon-silicon anodic bonding process; Bonding; Glass; Silicon; Stress; Substrates; Surface treatment; anodic bonding; embedded; glass; silicon;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location :
Xi´an
DOI :
10.1109/NEMS.2015.7147470