• DocumentCode
    718925
  • Title

    Tentative bonding effect for maintaining alignment accuracy in bonding utilizing thick SU8 as an adhesive material

  • Author

    Kondo, Masahiro ; Miyashita, Hidetoshi ; Sang-Seok Lee ; Matsuoka, Nobuo

  • Author_Institution
    Grad. Sch. of Eng., Tottori Univ., Tottori, Japan
  • fYear
    2015
  • fDate
    7-11 April 2015
  • Firstpage
    487
  • Lastpage
    490
  • Abstract
    In this paper we have reported that a novel method to maintain alignment accuracy in wafer bonding process utilizing resin as an adhesive material. We have proposed tentatively localized bonding method with 1100 nm near infrared (NIR) irradiation that is transparent to Si wafers. With the aid of our localized tentative bonding process, we have achieved maintenance of alignment accuracy when the 100 μm thick SU8 was utilized as an adhesive resin material between Si wafers. Moreover, in this paper, we have also reported the development results of a tentative bonder, which has the function for alignment of wafers simultaneously.
  • Keywords
    adhesive bonding; elemental semiconductors; resins; silicon; wafer bonding; NIR irradiation; SU8; Si; adhesive material; alignment accuracy; localized bonding method; localized tentative bonding process; near infrared irradiation; resin; size 100 mum; tentative bonder; wafer bonding process; wavelength 1100 nm; Accuracy; Bonding; Radiation effects; Resins; Silicon; Wafer bonding; SU8; alingment accuracy; near infrared; packaging; tentative bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
  • Conference_Location
    Xi´an
  • Type

    conf

  • DOI
    10.1109/NEMS.2015.7147474
  • Filename
    7147474