Silicon etching characteristics for the TMAH based solution with additives

Author

Ki-Wha Jun ; Jung-Sik Kim

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Seoul, Seoul, South Korea

fYear

2015

fDate

7-11 April 2015

Firstpage

507

Lastpage

510

Abstract

In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10~25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. Additive of IPA affected the morphology of the etched surface to be flat. Also, the PA additive improved the etched surface significantly by decreasing the hillock density on the surface.

Keywords

elemental semiconductors; etching; silicon; surface morphology; surface roughness; Si; THAM concentration; TMAH solution; anisotropic etching properties; corner undercut ratio; etched surface morphology; etched surface roughness; flat surface; hillock density; silicon etching characteristics; single crystal silicon; temperature 70 degC to 90 degC; Additives; Etching; Rough surfaces; Silicon; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on

Conference_Location

Xi´an

Type

conf

DOI

10.1109/NEMS.2015.7147479

Filename

7147479