DocumentCode
718930
Title
Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate
Author
Pengcheng Li ; Xiaoying Li ; Enfu Li ; Qiang Shen ; Honglong Chang
Author_Institution
Northwestern Polytech. Univ., Xi´an, China
fYear
2015
fDate
7-11 April 2015
Firstpage
511
Lastpage
514
Abstract
This paper presents a SOI based capacitive accelerometer using a backside dry release process. In order to increase the yield rate of the backside dry release process, the deep reactive ion etching (DRIE) process was improved by using a grooved accompany sheet. Using this method, the yield rate of the accelerometer was improved to 64.2% from19.2%. Test results show that sensitivity of the accelerometer is 3.5V/g.
Keywords
accelerometers; microsensors; silicon-on-insulator; sputter etching; DRIE process; SOI based capacitive accelerometer; backside dry release process; deep reactive ion etching process; grooved accompany sheet; in-plane SOI MEMS accelerometer; Accelerometers; Capacitors; Fabrication; Micromechanical devices; Noise; Sensitivity; Sensors; SOI; micro-accelerometer; yield rate;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location
Xi´an
Type
conf
DOI
10.1109/NEMS.2015.7147480
Filename
7147480
Link To Document