Title :
A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance
Author :
Saito, Hitoshi ; Sugimachi, Tatsuya ; Nakamura, Ko ; Ozawa, Soichiro ; Sashida, Naoya ; Mihara, Satoru ; Hikosaka, Yukinobu ; Wensheng Wang ; Hori, Tomoyuki ; Takai, Kazuaki ; Nakazawa, Mitsuharu ; Kosugi, Noboru ; Okuda, Masaki ; Hamada, Makoto ; Kawashi
Author_Institution :
Syst. Memory Div., Fujitsu Semicond. Ltd., Aizuwakamatsu, Japan
Abstract :
We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1017 cycles. Our newly developed triple-protection structured cell array, has constructed without an additional mask step, effectively protects 0.4-μm2 ferroelectric capacitors from hydrogen and moisture degradation. We have designed our capacitor-over-bit-line (COB) structure to have a small cell size of 0.5 μm2.
Keywords :
ferroelectric capacitors; ferroelectric storage; random-access storage; capacitor-over-bit-line structure; ferroelectric RAM; ferroelectric capacitors; hydrogen; moisture degradation; triple-protection structured COB FRAM; triple-protection structured cell array; voltage 1.2 V; Arrays; Capacitors; Electrodes; Ferroelectric films; Nonvolatile memory; Random access memory; Switches;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150275
