In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Author

Ji, B.L. ; Li, H. ; Ye, Q. ; Gausepohl, S. ; Deora, S. ; Veksler, D. ; Vivekanand, S. ; Chong, H. ; Stamper, H. ; Burroughs, T. ; Johnson, C. ; Smalley, M. ; Bennett, S. ; Kaushik, V. ; Piccirillo, J. ; Rodgers, M. ; Passaro, M. ; Liehr, M.

Author_Institution

Coll. of Nanoscale Sci. & Eng., SUNY Polytech. Inst., Albany, NY, USA

fYear

2015

fDate

17-20 May 2015

Firstpage

1

Lastpage

4

Abstract

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.

Keywords

built-in self test; error statistics; hafnium compounds; logic testing; resistive RAM; BIST; HfO_x; RRAM; adaptive error correction; bit-error-rate; build-in-self-test; electrical in-line-test cycle data; resistive random access memory; spatial variability; temporal variability; write cycle resistance statistics; Bit error rate; Current measurement; Electrical resistance measurement; Hafnium compounds; Manufacturing; Semiconductor device measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2015 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6931-2

Type

conf

DOI

10.1109/IMW.2015.7150290

Filename

7150290