• DocumentCode
    719544
  • Title

    Optimization of Ru Based Hybrid Floating Gate for Planar NAND Flash

  • Author

    Breuil, Laurent ; Lisoni, Judit ; Blomme, Pieter ; Van den bosch, Geert ; Van Houdt, Jan

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2015
  • fDate
    17-20 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20nm node causes important loss of coupling factor. In order to recover the Programming window, we develop a Hybrid Floating Gate using Ru as high work-function metal. With a proper nitridation of the underlying Si and ALD technique, we obtain a continuous Ru layer as thin as 2nm that is thermally stable in contact with Si. Thanks to the higher work function of Ru, a programming window of more than 10V has been be achieved.
  • Keywords
    NAND circuits; atomic layer deposition; elemental semiconductors; flash memories; nitridation; ruthenium; silicon; work function; ALD technique; Ru; Ru based hybrid floating gate; Si; control gate wrap-around; coupling factor; nitridation; planar NAND flash; planar structure; programming window; work function; work-function metal; Aluminum oxide; Computer architecture; Logic gates; Programming; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-6931-2
  • Type

    conf

  • DOI
    10.1109/IMW.2015.7150298
  • Filename
    7150298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=719544