Title :
Optimization of Ru Based Hybrid Floating Gate for Planar NAND Flash
Author :
Breuil, Laurent ; Lisoni, Judit ; Blomme, Pieter ; Van den bosch, Geert ; Van Houdt, Jan
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20nm node causes important loss of coupling factor. In order to recover the Programming window, we develop a Hybrid Floating Gate using Ru as high work-function metal. With a proper nitridation of the underlying Si and ALD technique, we obtain a continuous Ru layer as thin as 2nm that is thermally stable in contact with Si. Thanks to the higher work function of Ru, a programming window of more than 10V has been be achieved.
Keywords :
NAND circuits; atomic layer deposition; elemental semiconductors; flash memories; nitridation; ruthenium; silicon; work function; ALD technique; Ru; Ru based hybrid floating gate; Si; control gate wrap-around; coupling factor; nitridation; planar NAND flash; planar structure; programming window; work function; work-function metal; Aluminum oxide; Computer architecture; Logic gates; Programming; Silicon; Tin;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150298
