Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM

Author

Kudo, Masaki ; Arita, Masashi ; Takahashi, Yasuo ; Ohba, Kazuhiro ; Shimuta, Masayuki ; Fujiwara, Ichiro

Author_Institution

Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ. Sapporo, Sapporo, Japan

fYear

2015

fDate

17-20 May 2015

Firstpage

1

Lastpage

4

Abstract

The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.

Keywords

copper; resistive RAM; switching; tellurium; transmission electron microscopy; CBRAM; Cu-Te; conductive bridging RAM; conductive filament visualization; energy dispersive X-ray mapping; erase cycle; filament formation; filament rupture; in-situ TEM; in-situ transmission electron microscopy; nanometer scale ReRAM; reproducible resistive switching; write cycle; Current measurement; Electrical resistance measurement; Electrodes; Insulators; MOSFET; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2015 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6931-2

Type

conf

DOI

10.1109/IMW.2015.7150312

Filename

7150312