ESD gated diode SPICE compact model

Author

Zhenghao Gan ; An Zhang ; Waisum Wong ; Lifei Zhang ; Ye Haohua ; Chien-Lung Tseng

Author_Institution

Technol. R&D Center, Semicond. Manuf. Int. Corp., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

A physics-based new gated diode SPICE compact model is provided considering the following two effects: (1) the leakage current under reverse bias of gated diode caused by the gate/diffusion overlap tunneling current; (2) the substrate conductivity modulation associated with high injection of carriers due to mobility saturation during high current transmission line pulse (TLP). The new SPICE model matches the silicon data under both ESD TLP and normal DC forward/reverse bias very well. The model is scalable in terms of finger width and number.

Keywords

electrostatic discharge; elemental semiconductors; leakage currents; semiconductor device models; semiconductor diodes; silicon; tunnelling; ESD gated diode; SPICE compact model; Si; TLP; carrier injection; gate-diffusion overlap tunneling current; leakage current; mobility saturation; normal DC forward-reverse bias; physics-based new gated diode; silicon data; substrate conductivity modulation; transmission line pulse; Data models; Electrostatic discharges; Fingers; Logic gates; SPICE; Semiconductor diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153319

Filename

7153319