Title :
40Nm contact related process optimization for defect reduction
Author :
Zhibin He ; Xubin Jing ; Jian Cao ; Yuming Qiu ; Junhua Yan ; Jun Zhou ; Pang, Albert
Author_Institution :
Shanghai Huali Microelectron. Corp., Shanghai, China
Abstract :
Ni (Nickel) piping, Contact openness, and W (Tungsten) recess are three major defects encountered in 40nm Contact related process development. In this paper, PAI (Pre- Amorphous Implantation) and Ni capping layer were optimized for Ni piping reduction. Contact etch process window was enlarged to eliminate Contact openness. The specific PMOS-localized defect phenomenon was studied. High ILD (Interlayer Dielectric) CMP oxide loss was found responsible to cause poor post-CMP uniformity, which was the main contributor to W recess defect thereafter. Finally, we had obtained an effective ILD thickness and uniformity control in CMP and thus, solving W recess defect.
Keywords :
amorphous semiconductors; chemical mechanical polishing; crystal defects; ion implantation; nickel; semiconductor doping; tungsten; CMP oxide loss; Ni; PMOS-localized defect phenomenon; W; contact etch process window; contact openness; contact related process optimization; defect reduction; high interlayer dielectric; nickel capping layer; nickel piping; post-CMP uniformity; pre-amorphous implantation; size 40 nm; tungsten recess; Films; Lead; Logic gates; MOS devices; Nickel; Silicon; Sun;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153320
