Noise analysis in advanced memory devices

Author

Simoen, E. ; Aoulaiche, M. ; Jurczak, M. ; Giusi, G. ; Claeys, C.

Author_Institution

Imec, Leuven, Belgium

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

4

Abstract

Low-frequency (LF) analysis is applied to advanced memory devices in order to characterize, quantify and identify defects affecting their performance. In single-transistor (1T) Floating-Body Random Access Memory (FBRAM) on Ultra-thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI), it is shown that the retention time behavior can be explained by the traps giving rise to Generation-Recombination noise. In conventional DRAM technology, the capacitor leakage is one of the most serious showstoppers for scaling down. The analysis of the 1/f noise in the gate leakage current of STO-based DRAM Metal-Insulator-Metal (MIM) capacitors shows a strong impact of the gate stack on the defect density.

Keywords

1/f noise; DRAM chips; MIM devices; capacitors; leakage currents; silicon-on-insulator; 1/f noise; 1T; DRAM technology; FBRAM; LF analysis; SOl; STO-based DRAM MIM capacitor; UTBOX; advanced memory device; capacitor leakage; defect density; defect identification; dynamic random-access memory; floating-body random access memory; gate leakage current; gate stack; generation-recombination noise; low-frequency analysis; metal-insulator-metal capacitor; noise analysis; retention time behavior; silicon-on-insulator; single-transistor; ultrathin buried oxide; Capacitance measurement; Capacitance-voltage characteristics; Frequency measurement; Junctions; Standards; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153323

Filename

7153323