DocumentCode
720749
Title
A new simulation method for single photon avalanche diode
Author
Xiaopeng Xie ; Yue Xu ; Yang Huang ; YuFeng Guo ; Xiaoqing Chen ; Heng Yue
Author_Institution
Coll. of Electron. Sci. & Eng., Nanjing Univ. of Posts & Telecommun., Nanjing, China
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
Presently TCAD simulation of single photon avalanche diode (SPAD) cannot directly obtain the important performances of SPAD. In this paper, we propose a new simulation method combining TCAD simulation with the numerical computation, which can exactly predict the statistical performances of SPAD such as Quantum Detection Efficiency (QDE), Dark Count Rate (DCR) and Afterpulsing Probability (AP). This new simulation method is useful in optimizing SPAD design with higher QDE and lower DCR.
Keywords
avalanche diodes; photodiodes; probability; statistical analysis; technology CAD (electronics); AP; DCR; QDE; SPAD design; TCAD simulation; afterpulsing probability; dark count rate; quantum detection efficiency; simulation method; single photon avalanche diode; statistical performance; Mathematical model; Probability;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153327
Filename
7153327
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