Title :
A new simulation method for single photon avalanche diode
Author :
Xiaopeng Xie ; Yue Xu ; Yang Huang ; YuFeng Guo ; Xiaoqing Chen ; Heng Yue
Author_Institution :
Coll. of Electron. Sci. & Eng., Nanjing Univ. of Posts & Telecommun., Nanjing, China
Abstract :
Presently TCAD simulation of single photon avalanche diode (SPAD) cannot directly obtain the important performances of SPAD. In this paper, we propose a new simulation method combining TCAD simulation with the numerical computation, which can exactly predict the statistical performances of SPAD such as Quantum Detection Efficiency (QDE), Dark Count Rate (DCR) and Afterpulsing Probability (AP). This new simulation method is useful in optimizing SPAD design with higher QDE and lower DCR.
Keywords :
avalanche diodes; photodiodes; probability; statistical analysis; technology CAD (electronics); AP; DCR; QDE; SPAD design; TCAD simulation; afterpulsing probability; dark count rate; quantum detection efficiency; simulation method; single photon avalanche diode; statistical performance; Mathematical model; Probability;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153327
