Title :
Enlarge the process window of patterns in 22nm node by using mask topography aware OPC and SMO
Author :
Yansong Liu ; Xiaojing Su ; Lisong Dong ; Zhiyang Song ; Moran Guo ; Yajuan Su ; Yayi Wei ; Fengliang Liu ; Shengrui Zhang ; Lile Lu ; Weijie Shi ; Junwei Lu
Author_Institution :
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
The mask three dimensional (M3D) effect of thin Opaque MoSi on Glass (OMOG) mask is analyzed by investigating the difference of diffraction orders between rigorous electro-magnetic field (EMF) simulation and thin mask approximation. Then the potential of extending the process window of AttPSM and OMOG masks with 22nm node SRAM cell patterns by using Optical Proximity Correction (OPC) and Source Mask Optimization (SMO) is compared. Both the OMOG and AttPSM masks are simulated and discussed. For this case, the results show that the overlapped process window (PW) greatly reduces without considering the M3D effects in OPC. In addition, M3D aware SMO improves the total process window one step further.
Keywords :
SRAM chips; electromagnetic fields; masks; molybdenum alloys; optimisation; proximity effect (lithography); silicon alloys; AttPSM masks; EMF; MoSi; OMOG mask; OPC; SMO; SRAM cell patterns; diffraction orders; electro-magnetic field; mask three dimensional effect; mask topography; opaque MoSi on glass; optical proximity correction; overlapped process window; size 22 nm; source mask optimization; thin mask approximation; Micromechanical devices;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153352
