Title :
Optimization of PET (Post Etch Treatment) steps to enlarge queue time and decrease defect counts in Ultra low-k material AIO (all in one) etch processes
Author :
Xu Zhang ; Chen-Guang Gai ; Jun Huang
Author_Institution :
Shanghai Huali Microelectron. Inc., Shanghai, China
Abstract :
To reduce the RC interconnect delays and cross-talk noise associated with the sub-28 nm advanced CMOS technology nodes, Dual Damascene process combined with Ultra low-k material needs to be introduced into Integrated Circuits manufacturing. With pores and low density, Ultra low-k material can be easily damaged. In this paper, we studied how to protect Ultra low-k material (k=2.5) in the Metal Hard Mask AIO Etch (MHM AIO). In order to reduce polymer residue, recovery and protection for the surface of Cu after etch were studied. Stopping Oxygen and moisture from Cu corrosion, Post Etch Treatment (PET) was introduced into AIO etch process. We found that PET could protect Ultra low-k material. PET technology is becoming more critical, because the Queue time (Q-time) between AIO etch process and WET clean need to be enlarged.
Keywords :
CMOS integrated circuits; copper; corrosion; crystal defects; etching; integrated circuit interconnections; integrated circuit manufacture; integrated circuit noise; masks; polymers; Cu; MHM AIO etch process; PET optimization; Q-time; RC interconnect delay; advanced CMOS technology node; complementary metal oxide semiconductor; copper surface corrosion; cross-talk noise; defect count; dual damascene process; integrated circuit manufacturing; metal hard mask all in one etch process; polymer residue reduction; post etch treatment; queue time; ultralow-k material; Cleaning; Copper; Electrodes; Positron emission tomography; Reflectivity;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153375
