28nm Metal Hard Mask etch process development

Author

Liyan Zhang ; Chenguang Gai ; Hongrui Ren ; Jun Huang ; Xu Zhang ; Shugen Pen ; Yu Zhang ; Qiang Ge

Author_Institution

Shanghai Huali Microelectron. Corp., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

5

Abstract

Metal Hard Mask (MHM)-All In One (AIO) technology has been widely used in the process flow of copper inter-connect since 28 nm technology node and below. This is because AF immersion exposure technology reaches its limitation for line edge roughness control, photoresist (PR) thickness and profile control. In this paper, we described the issues and the solutions in the development of 28 nm node MHM etch process, including selectivity improvement for photoresist, optimization of line edge roughness (LER), and optimization of TiN profile & CD uniformity. Base on fundamental etch theory, several experiments were conducted, and we successfully achieved TiN with desired profile and CD with good uniformity for 28nm MHM process.

Keywords

copper; etching; integrated circuit interconnections; masks; photoresists; titanium compounds; AF immersion exposure technology; LER optimisation; MHM-AIO technology; PR thickness; TiN; all in one technology; copper interconnect; fundamental etch theory; line edge roughness control; metal hard mask etch process development; photoresist; profile control; size 28 nm; Irrigation; Lithography; Microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153376

Filename

7153376