Title :
Method of improving dislocation for SiGe EPI process
Author :
Xiangguo Meng ; Quanbo Li ; Jun Huang ; Pang, Albert
Author_Institution :
Shanghai Huali Microelectron. Corp., Shanghai, China
Abstract :
To obtain a defect free and dislocation free during SiGe deposition is the key for improving hole carrier mobility for 40 nm technology node and beyond. This paper presents a methodology to eliminate SiGe dislocation. The key step is to introduce SF6 during Si trench surface treatment after Si trench main etch.
Keywords :
Ge-Si alloys; dislocations; elemental semiconductors; etching; hole mobility; transmission electron microscopy; SiGe; TEM; dislocation defect; hole carrier mobility; surface treatment; Imaging; Plasmas; Shape; Silicon; Silicon compounds; Silicon germanium; Vacuum technology;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153377
