• DocumentCode
    720785
  • Title

    Method of improving dislocation for SiGe EPI process

  • Author

    Xiangguo Meng ; Quanbo Li ; Jun Huang ; Pang, Albert

  • Author_Institution
    Shanghai Huali Microelectron. Corp., Shanghai, China
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    To obtain a defect free and dislocation free during SiGe deposition is the key for improving hole carrier mobility for 40 nm technology node and beyond. This paper presents a methodology to eliminate SiGe dislocation. The key step is to introduce SF6 during Si trench surface treatment after Si trench main etch.
  • Keywords
    Ge-Si alloys; dislocations; elemental semiconductors; etching; hole mobility; transmission electron microscopy; SiGe; TEM; dislocation defect; hole carrier mobility; surface treatment; Imaging; Plasmas; Shape; Silicon; Silicon compounds; Silicon germanium; Vacuum technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153377
  • Filename
    7153377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=720785