DocumentCode :
720797
Title :
APF hard mask distortion improvement for high aspect ratio patterning
Author :
Yu Bing-Lung ; YuKai Huang ; Shing-Ann Luo ; Yi-Sheng Cheng ; Yung-Tai Hung ; Tuung Luoh ; Lin-Wuu Yang ; Tahone Yang ; Kuang-Chao Chen
Author_Institution :
Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
The goal of this research is to improve bending issue and etch durability of amorphous carbon hard mask film (APF). The design of experiments (DoE) employed variable conditions of the spacing, RF power, precursors flow (C3H6 or C2H2) and temperature. High Young´s modulus and high sp3/sp2 bonding ratio can increase the etching resistance, and strengthen the high aspect ratio patterning structures.
Keywords :
bending; design of experiments; etching; masks; semiconductor device manufacture; APF hard mask distortion; amorphous carbon hard mask film; bending issue; design of experiments; etch durability; etching resistance; high aspect ratio patterning; Bonding; Irrigation; Radio frequency; Standards; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153394
Filename :
7153394
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=720797
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