Piezoelectric properties of ZnO / BN multilayer structures at the nanometer scale

Author

Cao Rongrong ; Fang Huayong ; Wang Fang ; Fu Bangran ; Feng Yulin ; Zhang Kailiang ; Yang Baohe

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ. of Technol., Tianjin, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

In order to improve the piezoelectric properties of c-BN films, ZnO films with high coupling coefficient were stacked with it. The microstructure and piezoelectric characteristics of ZnO/BN films were investigated in this paper. The piezoelectric properties of multilayer films were improved dramatically with the piezoelectric coefficient d*33 was much higher and switching behavior of polarization could be more easily observed when compared with single c-BN film. This improvement makes c-BN suitable for high-frequency SAW devices.

Keywords

II-VI semiconductors; III-V semiconductors; boron compounds; multilayers; piezoelectric thin films; surface acoustic wave devices; wide band gap semiconductors; zinc compounds; ZnO-BN; ZnO-BN films; high coupling coefficient; high-frequency SAW devices; microstructure; multilayer films; multilayer structures; piezoelectric coefficient; polarization; switching behavior; II-VI semiconductor materials; Nanoscale devices; Nonhomogeneous media; Piezoelectric polarization; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153400

Filename

7153400