Title :
Influence of sputtering gas on resistivity of thin Ni silicide films
Author :
Imamura, H. ; Kakushima, K. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Wakabayashi, H. ; Tsutsui, K. ; Natori, K. ; Iwai, H.
Author_Institution :
Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Ni silicide film, formed by stacked structure of nickel and silicon, have been fabricated by RF magnetron sputtering using different gas species. The resistivity of the silicide films have been measured. While the resistivity of the film with Ar gas sputtering gradually decreases with higher annealing temperature, films with Kr gas sputtering show resistivity as low as the bulk ones in a wide process-temperature window. A model to explain the mechanism difference has been proposed.
Keywords :
annealing; argon; electrical resistivity; krypton; nickel compounds; semiconductor thin films; silicon; sputtering; Ar; Kr; NiS2; RF magnetron sputtering; annealing temperature; argon gas sputtering; krypton gas sputtering; silicon; sputtering gas influence; thin nickel silicide film resistivity; wide process-temperature window; Amorphous magnetic materials; Annealing; Conductivity; Magnetic devices; Magnetic films; Nickel; Sputtering;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153402
