Title :
Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si1−xGex
Author :
Gaire, Churamani ; Krishnan, Bharat ; Jinping Liu
Author_Institution :
Adv. Module Eng., GLOBALFOUNDRIES Inc., Malta, NY, USA
Abstract :
In this paper, we report the effect of two Si precursors, SiH4 and SiCl2H2 on the micro-loading, morphology and throughput for selective epitaxial growth of Si and Si1-xGex (0<;x<;1) on recessed or elevated source/drain junctions. We find that the pattern dependency (micro-loading), growth direction (morphology) and growth rate of selective epitaxial film of Si or Si1-xGex can be engineered by carefully adjusting the ratio of partial pressures of SiH4 and SiCl2H2.
Keywords :
Ge-Si alloys; elemental semiconductors; epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; Si; Si precursor effect; Si1-xGex; micro-loading; morphological property; selective epitaxial film growth rate; selective epitaxial growth throughput; source-drain junctions; Films; Morphology; Random access memory; Silicon; Throughput;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153415
