DocumentCode :
720812
Title :
Improvement on switching uniformity of HFOx-based RRAM device fabricated by CMP
Author :
Feng Yulin ; Zhang Kailiang ; Wang Fang ; Yuan Yujie ; Han Yemei ; Cao Rongrong ; Su Shuai
Author_Institution :
Tianjin Key Lab. of Film Electron. & Commun. Devices, Tianjin Univ. of Technol., Tianjin, China
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
The hafnium oxide (HfOx)-based Resistive Random Access Memory (RRAM) array devices are fabricated by chemical mechanical planarization (CMP) process, which is based on the optimization of slurry and exploration on mechanism of HfOx-CMP. The performance of switching properties post-polishing is investigated from device to device (WIW) as well as compared with those without planarization. The results indicate that the switching uniformity and the dispersion of operational voltages were improved after a two-step planarization, and the mechanism has also been explored.
Keywords :
chemical mechanical polishing; hafnium compounds; optimisation; planarisation; resistive RAM; slurries; CMP; HfOx; chemical mechanical planarization; hafnium oxide-based RRAM device; resistive random access memory; slurry optimization; switching properties post-polishing; switching uniformity; two-step planarization; Chemicals; Dielectrics; Dispersion; Fabrication; Hafnium compounds; Optical switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153417
Filename :
7153417
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=720812
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