Title :
Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs
Author :
Simoen, E. ; Ritzenthaler, R. ; Schram, T. ; Spessot, A. ; Aoulaiche, M. ; Fazan, P. ; Na, H.-J. ; Lee, S.-G. ; Son, Y. ; Noh, K.B. ; Horiguchi, N. ; Thean, A. ; Claeys, C.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The oxide trap density profile in DRAM peripheral nMOSFETs with Mg cap and different thermal budgets for in-diffusion of the metal ions has been investigated by low-frequency noise. It is shown that close to the SiO2/HfO2 interface a peak in the trap density is found, which disappears under a high thermal budget. No impact of Mg on the bulk oxide trap density in the HfO2 is observed.
Keywords :
DRAM chips; MOS memory circuits; hafnium compounds; magnesium; silicon compounds; thermal diffusion; thermal management (packaging); DRAM peripheral nMOSFET; HfO2; Mg; SiO2; low-frequency noise; metal ion in-diffusion; oxide trap density profile; thermal budget; Logic gates; MOSFET circuits; Silicon;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153430
