Optimization of STI oxide recess uniformity for FinFET beyond 20nm

Author

Lijuan Du ; Hai Zhao ; Weiguang Yang ; Yang, Rex ; Chen, Larry ; Yu Shaofeng ; Gang Mao ; Qingling Wang ; Yangkui Lin ; Shicheng Ding ; Zhengling Chen

Author_Institution

Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

4

Abstract

In the process of the FinFETs, shallow trench isolation (STI) oxide recess is very critical to fin height control which has significant impact on the electrical performance of device. In this work, void free STI gap filling process has been demonstrated with process optimization. STI CMP uniformity for both global and local areas has been studied. STI oxide shape and recess uniformity have also been evaluated with different oxide recess methods. Good STI oxide profile and uniformity of STI oxide recess have been achieved through above process optimization.

Keywords

MOSFET; chemical mechanical polishing; isolation technology; optimisation; planarisation; FinFET; STI CMP; STI gap filling process; STI oxide profile; STI oxide recess uniformity; chemical mechanical planarization; process optimization; shallow trench isolation; Etching; Filling; FinFETs; Optimization; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153433

Filename

7153433