Title :
TSV fabrication for image sensor packaging
Author :
Wang Ping ; Wang Bangxu ; Jun, L.V. ; Huang, Mark ; Lai, Carl
Author_Institution :
Suzhou Speed Semicond. Technol. Co. Ltd., Suzhou, China
Abstract :
In this paper, we report a novel TSV fabrication method to develop CMOS image sensor package. The major processes comprise cavity wall formation, glass carrier to IC wafer bonding, grinding, TSV fabrication, passivation, laser drilling to expose the Al bondpads, PVD deposition, electroplating, re-distribution layer (RDL), under bump metallization and solder bump formation. The as-formed TSV CIS structure is solid and reliable in mass production.
Keywords :
CMOS image sensors; aluminium; electroplating; grinding; integrated circuit metallisation; integrated circuit packaging; passivation; solders; three-dimensional integrated circuits; wafer bonding; Al; Al bondpads; CMOS image sensor package; PVD deposition; TSV fabrication; TSV passivation; bump metallization; cavity wall formation; electroplating; glass carrier; integrated circuit wafer bonding; integrated circuit wafer grinding; laser drilling; re-distribution layer; solder bump formation; Glass; Image sensors; Packaging; Semiconductor device reliability; Silicon; Stress; CMOS Imager Sensor; PVD; Plating; Redistribution Layer; Through silicon via;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153436
