Title :
Numerical analysis on the liquid cooling of microchannel heatsink with phase change material
Author :
Han-Chieh Chiu ; Ren-Horng Hsieh ; Jhih-Teng Yao ; Jer-Huan Jang
Author_Institution :
Dept. of M.E., Taipei Chengshih U. of Sci. & Tech., Taipei, Taiwan
Abstract :
In this study, a microchannel heatsink with working fluid containing phase change material has been investigated numerically. The addition of phase change material in working fluid is to increase the heat transfer rate during cooling process. Commercial software ANSYS Fluent 15.0 is utilized to study the thermal resistance of the microchannel heatsink. Properties of working fluid with phase change material are with mass-averaged values. The numerical model for the phase change material used the latent heat as a function of heat capacity during phase change. This concept is modeled with user defined function in the simulation. The effects of microchannel geometry and the driven pressure difference between the entrance and exit of the heatsink on heat transfer performance are studied as well. The microchannel width varies in hundred micrometers with 2mm in height; the cross-sectional porosity of the fin array ranges from 0.6 to 0.7. Concentration of the phase change material in the working fluid is also a parameter in the investigation, ranging from 0% to 10%. The driven pressure difference of the working fluid is less than 30cm water head. The fin array covers an area of 1cm2, and the power supply is 60W, such that the heat flux is 0.6MW/m2.
Keywords :
heat sinks; latent heat; microchannel flow; numerical analysis; phase change materials; porosity; porous materials; thermal management (packaging); thermal resistance; ANSYS Fluent 15.0; cooling process; cross-sectional porosity; fin array; heat capacity; heat flux; heat transfer rate; latent heat; liquid cooling; microchannel geometry; microchannel heatsink; phase change material; power supply; thermal resistance; water head; Cooling; Finite element analysis; Heating; Phase change materials; Pumps; Thermal resistance;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153444