Title :
OCD measurement of defocus and dose in EUV lithography
Author :
Chen Huiping ; Gao Fu ; Huang Kun ; Zhang Zhensheng ; Shi Yaoming ; Xu Yiping
Author_Institution :
Raintree Sci. Instrum. (Shanghai) Corp., Shanghai, China
Abstract :
Critical dimension (CD) and geometry shape of the gratings play a key role in extreme ultraviolet (EUV) lithography to ensure the device performance. It is important to control the dose/defocus in the EUV photolithography under proper status to make sure the CD and shape meeting the fine and strict requirements. Through the OCD measurement, we build a relationship between the CD/shape and dose/defocus through a Focus-Exposure-Matrix (FEM) wafer, and eventually can measure the dose/defocus in a product wafer.
Keywords :
semiconductor technology; ultraviolet lithography; EUV lithography; OCD measurement; critical dimension; extreme ultraviolet lithography; focus-exposure-matrix wafer; geometry shape; Nickel;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153452
