Use soft-decision error-correction codes in Phase-Change Memory

Author

Binbin Li ; Bolun Zhang ; Yifan Zhang ; Dongmei Xue

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

Researches indicate that the resistance of phase-change material will become larger over the time. Use time-aware based soft-decision error correction code, which needs LLR to decode, can correct the errors in multilevel PCM effectively. Accurate LLR needs to read the resistance accurately, which will lead to a longer transmission latency. In this paper, we proposed a non-uniform correction strategy, which can reduce the read levels maintaining bit-error-rate performance. We use LDPC in correction of 4-level per cell PCM, and get the result via computer simulation.

Keywords

error correction codes; error statistics; parity check codes; phase change materials; phase change memories; LDPC; LLR; bit-error-rate performance; log-likelihood-ratio; low density parity check; multilevel PCM; nonuniform correction strategy; phase change material resistance; phase-change memory; soft-decision error-correction code; transmission latency; Electron devices; Performance evaluation; Phase change materials; Reliability; Transforms;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153460

Filename

7153460