DocumentCode :
720845
Title :
Use soft-decision error-correction codes in Phase-Change Memory
Author :
Binbin Li ; Bolun Zhang ; Yifan Zhang ; Dongmei Xue
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
Researches indicate that the resistance of phase-change material will become larger over the time. Use time-aware based soft-decision error correction code, which needs LLR to decode, can correct the errors in multilevel PCM effectively. Accurate LLR needs to read the resistance accurately, which will lead to a longer transmission latency. In this paper, we proposed a non-uniform correction strategy, which can reduce the read levels maintaining bit-error-rate performance. We use LDPC in correction of 4-level per cell PCM, and get the result via computer simulation.
Keywords :
error correction codes; error statistics; parity check codes; phase change materials; phase change memories; LDPC; LLR; bit-error-rate performance; log-likelihood-ratio; low density parity check; multilevel PCM; nonuniform correction strategy; phase change material resistance; phase-change memory; soft-decision error-correction code; transmission latency; Electron devices; Performance evaluation; Phase change materials; Reliability; Transforms;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153460
Filename :
7153460
Link To Document :
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