Plasma diagnostics of resonance magnetic field effects on a-Si:H thin films deposition using electron cyclotron resonance plasma

Author

Hu, L.C. ; Lin, Y.W. ; Wang, C.J. ; Wei, T.C. ; Yang, C.R. ; Lee, C.C. ; Chang, J.Y. ; Chen, I.C. ; Li, Tomi T.

Author_Institution

Dept. of Mech. Eng., Nat. Central Univ., Taoyuan, Taiwan

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

This study demonstrated the use of quadrupole mass spectrometer (QMS) and optical emission spectrometer (OES) in diagnosing plasma process of electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The result showed that, by adjusting main magnetic coil current in ECR-CVD system, the relationship between plasma chemical composition and magnetic field was discussed in this paper. As the results, by controlling appropriate magnetic field configuration, the characteristics of a-Si:H thin film such as photosensitive, microstructure and deposition rate could be improved.

Keywords

chemical vapour deposition; cyclotron resonance; magnetic field effects; mass spectrometers; plasma diagnostics; semiconductor doping; silicon; thin films; ECR-CVD process; OES; QMS; Si:H; electron cyclotron resonance-chemical vapor deposition; magnetic coil current; optical emission spectrometer; plasma chemical composition; plasma diagnostic; plasma process diagnosis; quadrupole mass spectrometer; resonance magnetic field effect; thin film deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153464

Filename

7153464